Canon Prepares Nanoimprint Lithography Device To Problem EUV Scanners
Canon has just lately revealed its FPA-1200NZ2C, a nanoimprint semiconductor manufacturing instrument that can be utilized to make superior chips. The machine makes use of nanoimprint lithography (NIL) know-how as a substitute for photolithography, and might theoretically problem excessive ultraviolet (EUV) and deep ultraviolet (DUV) lithography instruments in relation to decision.
Not like conventional DUV and EUV photolithography gear that transfers a circuit sample onto a resist-coated wafer via projection, nanoimprint instrument employs a distinct approach. It makes use of a masks, embossed with the circuit sample, which instantly presses towards the resist on the wafer. This technique eliminates the necessity for an optical mechanism within the sample switch course of, which guarantees a extra correct replica of intricate circuit patterns from the masks to the wafer. In principle, NIL permits formation of complicated two- or three-dimensional circuit patterns in a single step, which guarantees to decrease prices. NIL itself is just not a brand new know-how, nevertheless it has remained in parallel growth over time, whereas the challenges concerned in additional bettering photolithography have Canon believing that now is an effective time for a second-look.
Canon says that its FPA-1200NZ2C permits patterning with a minimal linewidth (essential dimensions, CD) of 14 nm, which is nice sufficient to ‘stamp’ a circa 26-nm minimal metallic pitch, and subsequently appropriate for five nm-class course of applied sciences. That may be in step with capabilities of ASML’s Twinscan NXE:3400C (and comparable) EUV lithography scanners with a 0.33 numerical aperture (NA) optics.
In the meantime, Canon says that additional refinements of its know-how, its instrument can obtain finer resolutions that may allow 3 nm and even 2 nm-class manufacturing nodes.
Nanoimprint lithography presents a number of compelling benefits over photolithography. Primarily, NIL excels in decision, enabling the creation of buildings on the nanometer scale with outstanding precision with out utilizing photomasks. This know-how bypasses the diffraction limits encountered in standard photolithography, permitting for extra intricate and smaller options. Moreover, NIL operates with out the need of complicated optics or high-energy radiation sources, resulting in doubtlessly decrease operational prices and easier gear.
One other benefit of NIL is its direct patterning functionality, enabling the replica of three-dimensional nanostructures successfully. Such performance makes NIL a potent instrument within the manufacturing of photonics and different purposes the place three-dimensional nano-patterns are important. The know-how additionally facilitates higher sample constancy and uniformity.
Nevertheless, NIL additionally presents sure challenges and limitations. One notable problem is its susceptibility to defects because of the direct contact concerned within the imprinting course of. Particles or contaminants current on the substrate or the mould can result in defects, which can have an effect on the general yield and reliability of the manufacturing course of. This necessitates impeccable course of management and cleanliness to keep up constant output high quality.
Moreover, NIL, in its conventional kind, is a serial course of, which limits its throughput and manufacturing capability. Not like photolithography, which might course of whole wafers or giant areas in a parallel style, NIL usually includes processing smaller areas sequentially. This poses nice challenges in scaling the know-how for high-volume manufacturing of chips, which limits its utilization for chip manufacturing. In the meantime, NIL can be utilized to create photomasks for EUV and DUV. Additionally, it might theoretically be used to create patterned media for arduous disk drives.